Signal Atomic-interface transistor achieves 0.42-nanometer thickness, pointing beyond silicon scaling

Summary

Researchers reported designing a new atomic-scale interface. The interface protects electron flow while still allowing an extremely thin insulating layer. Using it, they built a transistor with strong electrical control at a thickness of 0.42 nanometers. The result is presented as a potential path beyond the scaling limits that conventional silicon-based structures are approaching. The interface design and transistor performance figures were specified in detail in the report.